![]() ![]() For an n-type VOFET, it is therefore expected that a p-doped layer, placed into the accumulation region, will lead to an inversion operation in the same way as demonstrated previously for conventional p-type OFETs. The VOFET geometry works much like a conventional OFET in the sense that charge carriers emitted from the source electrode first accumulate at the gate dielectric interface before entering the vertical channel to the drain electrode. 11 In order to test whether this VOFET geometry allows for inclusion of the inversion operation principle, it is implemented into VOFETs of the same type, with molybdenum trioxide (MoO 3) as dopant 16,17 for the p-doped inversion channel (see Fig. Previous efforts in this area have shown the good performance of VOFETs using C 60 as the organic semiconductor. 12–15 Variation of the doping concentration or thickness of the inversion layer allows to control the threshold voltage and Off state current of the VOFET without altering the geometry or material system as a whole. In this letter, we report on a vertical OFET (VOFET) 10,11 operating in inversion mode. ![]() In many cases, however, a change in material system or geometry seems necessary in order to tune certain parameters, such as the threshold voltage or On/Off ratio, to the needs of a specific application. 4 Many such devices have been reported recently, 5–9 showing promising performance and easy fabrication procedures. A simple way to meet these requirements is the vertical stacking of the transistor electrodes, resulting in a so-called vertical organic transistor. 1–3 They should be easy and cheap to fabricate, yet show high performance and adaptability to the specific needs of the application. Organic field-effect transistors (OFETs) are the key devices for many future flexible electronics applications. ![]()
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